欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MCM67H618AFN9
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: 64K x 18 Bit BurstRAM Synchronous Fast Static RAM
中文描述: 64K X 18 CACHE SRAM, PQCC52
封裝: PLASTIC, LCC-52
文件頁數: 2/12頁
文件大小: 208K
代理商: MCM67H618AFN9
MCM67H618A
2
MOTOROLA FAST SRAM
BLOCK DIAGRAM
(See Note)
B
C
DQ0 – DQ8
CLR
Q0
Q1
A0
A1
K
ADSC
A0 – A15
E
G
ADDRESS
REGISTER
WRITE
REGISTER
ENABLE
REGISTER
DATA–IN
REGISTERS
OUTPUT
BUFFER
64K x 18
MEMORY
ARRAY
ADV
BURST LOGIC
INTERNAL
ADDRESS
A0
A1
16
9
18
16
2
A2 – A15
A1 – A0
DQ9 – DQ17
9
9
9
9
9
UW
LW
ADSP
NOTE:
All registers are positive–edge triggered. The ADSC or ADSP signals control the duration of the burst and the start of the
next burst. When ADSP and E are sampled low, any ongoing burst is interrupted and a read (independent of W and ADSC)
is performed using the new external address. Alternatively, an ADSP–initiated two cycle WRITE can be performed by as-
serting ADSP, E, and a valid address on the first cycle, then negating both ADSP and ADSC and asserting LW and/or UW
with valid data on the second cycle (see Single Write Cycle in WRITE CYCLES timing diagram). Note that when E and
ADSC are high, ADSP is ignored – the external address is not registered in this case.
When ADSC is sampled low (and ADSP is sampled high), any ongoing burst is interrupted and a read or write (dependent
on W) is performed using the new external address. Chip enable (E) is sampled only when a new base address is loaded.
After the first cycle of the burst, ADV controls subsequent burst cycles. When ADV is sampled low, the internal address
is advanced prior to the operation. When ADV is sampled high, the internal address is not advanced, thus inserting a wait
state into the burst sequence accesses. Upon completion of a burst, the address will wrap around to its initial state. See
BURST SEQUENCE TABLE
. Write refers to either or both byte write enables (LW, UW).
BURST SEQUENCE TABLE
(See Note)
External Address
A15 – A2
A1
A0
1st Burst Address
A15 – A2
A1
A0
2nd Burst Address
A15 – A2
A1
A0
3rd Burst Address
A15 – A2
A1
A0
NOTE: The burst wraps around to its initial state upon completion.
相關PDF資料
PDF描述
MCM67M618AFN10 Circular Connector; No. of Contacts:8; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:17; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:17-8 RoHS Compliant: No
MCM67M618A 64K x 18 Bit BurstRAM Synchronous Fast Static RAM
MCM67M618AFN12 LJT 23C 21#20 2#16 PIN PLUG
MCM67M618AFN9 64K x 18 Bit BurstRAM Synchronous Fast Static RAM
MCM67Q709A 128Kx9 Bit Synchronous Fast Static RAM(128Kx9 Bit同步快速靜態存儲器)
相關代理商/技術參數
參數描述
MCM67H618B 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM
MCM67H618BFN10 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM
MCM67H618BFN12 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM
MCM67H618BFN9 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 18 Bit BurstRAM Synchronous Fast Static RAM
MCM67J518 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 18 Bit BurstRAM Synchronous Fast Static RA
主站蜘蛛池模板: 万盛区| 东方市| 含山县| 高台县| 方山县| 奉新县| 永安市| 安国市| 平谷区| 衡阳县| 连江县| 阿拉尔市| 伽师县| 灵宝市| 清河县| 安远县| 格尔木市| 峨眉山市| 建始县| 榆中县| 伊春市| 类乌齐县| 来宾市| 乐至县| 扎鲁特旗| 肥东县| 册亨县| 烟台市| 成武县| 沐川县| 雷山县| 阳山县| 天台县| 赤城县| 疏附县| 安义县| 焦作市| 营口市| 崇左市| 徐州市| 奇台县|