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參數資料
| 型號： | MCM69F536CTQ9R |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 32K X 36 CACHE SRAM, 9 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數： | 7/12頁 |
| 文件大小： | 209K |
| 代理商： | MCM69F536CTQ9R |
MCM69F536C
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VIL
VIH
3.135
3.3
3.6
V
Input Low Voltage
– 0.5*
—
0.8
V
Input High Voltage
2.0
—
5.5**
V
*VIL
≥
– 2 V for t
≤
tKHKH/2.
**VIH
≤
6 V for tKHKH/2.
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Notes
Input Leakage Current (0 V
≤
Vin
≤
VDD) (Excluding LBO)
Output Leakage Current (0 V
≤
Vin
≤
VDD)
AC Supply Current (Device Selected,
All Outputs Open,
All Inputs Toggling at Vin
≤
VIL or
≥
VIH,
Cycle Time
≥
tKHKH min)
CMOS Standby Supply Current (Deselected,
Clock (K
)
Cycle Time
≥
tKHKH,
All Inputs Toggling at CMOS Levels
Vin
≤
VSS + 0.2 V or
≥
VDD – 0.2 V)
Clock Running Supply Current (Deselected,
Clock (K
)
Cycle Time
≥
tKHKH,
All Other Inputs Held to Static CMOS Levels
Vin
≤
VSS + 0.2 V or
≥
VDD – 0.2 V)
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = – 4 mA)
NOTES:
1. Reference AC Operating Conditions and Characteristics for input and timing.
2. All addresses transition simultaneously low (LSB) and then high (HSB).
3. Data states are all zero.
4. Device in deselected mode as defined by the Truth Table.
Ilkg(I)
Ilkg(O)
IDDA
—
±
1
μ
A
—
±
1
μ
A
MCM69F536C–8.5
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
—
320
320
310
300
mA
1, 2, 3
MCM69F536C–8.5
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
ISB1
—
150
150
140
130
mA
4
MCM69F536C–8.5
MCM69F536C–9
MCM69F536C–10
MCM69F536C–12
ISB2
—
55
55
50
45
mA
4
VOL
VOH
—
0.4
V
2.4
—
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
CI/O
—
4
6
pF
Input/Output Capacitance
—
7
9
pF
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