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參數資料
| 型號： | MGA-412P8-TR2G |
| 廠商： | Avago Technologies Ltd. |
| 英文描述： | GaAs Enhancement-mode pHEMT Power Amplifier optimized for IEEE 802.11b/g applications |
| 中文描述： | GaAs增強模式pHEMT功率放大器優化的IEEE 802.11b / g應用 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 135K |
| 代理商： | MGA-412P8-TR2G |
MGA-412P8
GaAs Enhancement-mode pHEMT Power Amplifier
optimized for IEEE 802.11b/g applications
Data Sheet
Description
Avago Technologies’s MGA-412P8 linear power
amplifier is designed for applications in the (1.7-3)
GHz frequency range. The amplifier is optimized for
IEEE 802.11b/g WLAN applications and has a best-in-
class efficiency (PAE) of 25.5% (54Mbps OFDM)
achieved through the use of Avago Technologies’
proprietary GaAs Enhancement-mode pHEMT
process.
The MGA-412P8 is housed in a miniature 2.0 x 2.0 x
0.75mm
3
8-lead leadless-plastic-chip-carrier (LPCC)
package. The compact footprint, low profile and
excellent thermal efficiency of the LPCC package
makes the MGA-412P8 an ideal choice as a power
amplifier for mobile IEEE 802.11b/g WLAN
applications.
It achieves +19.0 dBm linear output power that meets
3% EVM at 54Mbps data rate (OFDM Modulation),
and 23dBm at 11Mbps (CCCK modulation).
Component Image
Features
Advanced GaAs E-pHEMT
Integrated power detector & power down functions
High efficiency
Single +3.3V Supply
Small Footprint: 2x2mm
2
Low Profile: 0.8mm max.
Specifications
At 2.452 GHz; 3.3V (Typ.) :
Gain: 25.5 dB
P1dB: 25.3 dBm
Pout linear with IEEE 802.11g OFDM modulation
@54Mbps data rate: 19.0 dBm @ 3% EVM.
Current @19dBm linear Pout: (54Mbps) : 95mA
Reverse Isolation (typ): > 40dB
Quiescent current (typ): 40mA
Meets IEEE 802.11b @11Mbps (CCCK modulation)
with Pout: 23dBm while consuming 200mA.
Applications
Power Amplifier for IEEE 802.11b/g WLAN
applications
Bluetooth Power Amplifier
2.4GHz ISM band applications
2.0 x 2.0 x 0.75 mm
8-lead LPCC
Pin 8
BottomView
Top View
Note:
Package marking provides Orientation and Identification
"1C" = Product Code
"X" = Date code indicates month of manufacture
1CX
Pin 7
Pin 6
Pin 5
Pin 1
Pin 2
Pin 3
Pin 4
1:Gnd
2:RFin
2:Gnd
4:Vdd1
8:Det
7:RFout
6:Vdd2
5:Pwr Down
Attention
: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Technologies Application
Note A004R:
Electrostatic Discharge,
Damage and Control
.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MGA-425P8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package |
| MGA-425P8_07 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:GaAs Enchancement-mode PHEMT Power Amplifier in 2x2 mm2 LPCC Package |
| MGA-425P8-BLK | 功能描述:射頻放大器 Amplifier RFIC GaAs RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MGA-425P8-BLK | 制造商:Avago Technologies 功能描述:Amplifier IC |
| MGA-425P8-TR1 | 功能描述:射頻放大器 Amplifier RFIC GaAs RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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