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參數資料
| 型號： | MGB15N35CL |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Ignition IGBT 15 Amps, 350 Volts(15A，350V鉗位電壓，點火絕緣柵雙極型晶體管（D2PAK封裝）) |
| 中文描述： | 點火IGBT15安培，350伏特，（第15A，350V鉗位電壓，點火絕緣柵雙極型晶體管（采用D2PAK封裝）） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 73K |
| 代理商： | MGB15N35CL |
Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev. 3
1
Publication Order Number:
MGP15N35CL/D
MGP15N35CL,
MGB15N35CL
Preferred Device
Ignition IGBT
15 Amps, 350 Volts
N–Channel TO–220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for Coil–On–Plug, IGBT–On–Coil, or Distributorless Ignition
System Applications
High Pulsed Current Capability up to 50 A
Gate–Emitter ESD Protection
Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
Optional Gate Resistor (RG)
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCER
VGE
IC
380
VDC
VDC
VDC
ADC
AAC
Collector–Gate Voltage
380
Gate–Emitter Voltage
22
Collector Current–Continuous
@ TC = 25
°
C – Pulsed
15
50
ESD (Human Body Model)
R = 1500
, C = 100 pF
ESD
8.0
kV
ESD (Machine Model)
R = 0
, C = 200 pF
ESD
800
V
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
150
1.0
Watts
W/
°
C
Operating and Storage Temperature
Range
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE
CHARACTERISTICS (TJ
TJ, Tstg
–55 to
175
°
C
150
°
C)
Characteristic
Symbol
Value
Unit
Single Pulse Collector–to–Emitter
Avalanche Energy
VCC = 50 V, VGE = 5 V, Pk IL = 14.2 A,
L = 3 mH, Starting TJ = 25
°
C
VCC = 50 V, VGE = 5 V, Pk IL = 10 A,
L = 3 mH, Starting TJ = 150
°
C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, L = 3 mH,
Pk IL = 25.8 A, Starting TJ = 25
°
C
EAS
300
200
mJ
EAS(R)
1000
mJ
1
Gate
3
Emitter
4
Collector
2
Collector
1
Gate
3
Emitter
4
Collector
2
Collector
TO–220AB
CASE 221A
STYLE 9
12
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G15N35CL
Y
WW
= Device Code
= Year
= Work Week
G15N35CL
YWW
G15N35CL
YWW
1
2
3
D2PAK
CASE 418B
STYLE 4
4
Device
Package
Shipping
ORDERING INFORMATION
MGP15N35CL
TO–220
50 Units/Rail
MGB15N35CLT4
D2PAK
800 Tape & Reel
15 AMPERES
350 VOLTS (Clamped)
VCE(on) @ 10 A = 1.8 V Max
http://onsemi.com
N–Channel
Preferred
devices are recommended choices for future use
and best overall value.
C
E
G
RGE
RG
相關PDF資料 |
PDF描述 |
|---|---|
| MGB15N38CL | Ignition IGBT 15 Amps, 380 Volts(15A，380V鉗位電壓，點火絕緣柵雙極型晶體管（D2PAK封裝）) |
| MGB15N40CL | Ignition IGBT 15 Amps, 410 Volts(15A，410V鉗位電壓，點火絕緣柵雙極型晶體管（D2PAK封裝）) |
| MGB19N35CL | Ignition IGBT 19 Amps, 350 Volts(19A，350V鉗位電壓，點火絕緣柵雙極型晶體管（D2PAK封裝）) |
| MGP19N35CL | Ignition IGBT 19 Amps, 350 Volts(19A，350V鉗位電壓，點火絕緣柵雙極型晶體管（TO-220封裝）) |
| MGP4N60ED | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MGB15N35CLT4 | 功能描述:IGBT 晶體管 15A 350V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGB15N40CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGB15N40CLT4 | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGB19N35CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
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