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參數資料
| 型號： | MGF0909A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | L,S BAND POWER GaAs FET |
| 中文描述： | 升，S波段砷化鎵場效應管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 22K |
| 代理商： | MGF0909A |
MGF0909A
MITSUBISHI SEMICONDUCTOR GaAs FET
L, S BAND POWER GaAs FET
Nov. ′97
9.0±0.2
0.6±0.2
14.0
5.0
2.2
DESCRIPTION
The MGF0909A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
High output power
P
1dB
=38dBm(TYP.)
High power gain
G
LP
=11dB(TYP.)
High power added efficiency
η
add
=45%(TYP.)
@f=2.3GHz
@f=2.3GHz,P
in
=20dBm
@f=2.3GHz,P
1dB
=20dBm
APPLICATION
For UHF Band power amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V
DS
=10V
I
D
=1.3A
Rg=100
Refer to Bias Procedure
OUTLINE DRAWING
Unit:millimeters
GF-7
GATE
SOURCE
DRAIN
3
2
1
1
2
2
3
Typ
–
Max
5
-5
Min
–
-2
–
37
10
–
–
Limits
Parameter
Test conditions
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
I
DSS
V
Gs(off)
gm
P
1dB
G
LP
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Linear power gain *2
–
–
–
–
A
V
S
1.5
38
11
45
–
–
dBm
dB
%
C/W
η
add
R
th(ch-c)
*1:Channel to case *2:Pin=22dBm
Power added efficiency at P
1dB
Thermal resistance *1
5.5
V
DS
=3V,V
GS
=0V
V
DS
=3V,I
D
=10mA
V
DS
=3V,I
D
=1.3A
V
DS
=10V,I
D
=1.3A,f=2.3GHz
ABSOLUTE MAXIMUM RATINGS
(T
a
=25C)
Symbol
Parameter
V
GSO
Gate to source voltage
Gate to drain voltage
I
D
Drain current
I
GR
I
GF
Forward gate current
Ratings
-15
-15
5.0
15
31.5
175
V
GDO
P
T
T
ch
T
stg
Unit
V
V
A
mA
mA
Total power dissipation *1
Channel temperature
Storage temperature
27.3
-65 to +175
W
C
C
Reverse gate current
*1:TC=25C
V
f
method
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MGF0909A_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L,S BAND POWER GaAs FET |
| MGF0909A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET(small signal gain stage) |
| MGF0910A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0910A_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
| MGF0910A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:High-power GaAs FET (small signal gain stage) |
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