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參數資料
| 型號： | MGF0910A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | L, S BAND POWER GaAs FET |
| 中文描述： | 升，S波段砷化鎵場效應管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 26K |
| 代理商： | MGF0910A |
MGF0910A
MITSUBISHI SEMICONDUCTOR GaAs FET
L, S BAND POWER GaAs FET
Nov. ′97
10.0
Typ
–
Max
5.0
–
Min
–
–
-2
Limits
Parameter
Test conditions
DESCRIPTION
The MGF0910A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
Class A operation
High output power
P
1dB
=38dBm(TYP)
High power gain
G
LP
=11dB(TYP)
High power added efficiency
η
add
=45%(TYP)
Hermetically sealed metal-ceramic package with ceramic lid
@2.3GHz
@2.3GHz
@2.3GHz,P
1dB
APPLICATION
UHF band power amplifiers
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
V
DS
=10V
I
D
=1.3A
Rg=100
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
(T
a
=25C)
Symbol
Parameter
V
GDO
V
GSO
Gate to source voltage
I
D
Drain current
I
GR
I
GF
Forward gate current
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
I
DSS
gm
V
GS(off)
Saturated drain current
Transconductance
OUTLINE DRAWING
Unit:millimeters
–
-5
A
S
V
–
1.5
dBm
dB
%
C/W
GF-21
Ratings
-15
-15
5
15
31.5
175
P
T
T
ch
T
stg
Unit
V
V
A
mA
mA
Gate to drain voltage
Total power dissipation *1
Channel temperature
Storage temperature
27.3
-65 to +175
W
C
C
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain *2
–
–
38
11
45
–
37
GATE
SOURCE(FLANGE)
DRAIN
3
2
1
η
add
R
th(ch-c)
*1:Channel to case *2:Pin=22dBm
Power added efficiency at P
1dB
Thermal resistance *1
10
–
–
5.5
V
DS
=3V,V
GS
=0V
V
DS
=3V,I
D
=1.3A
V
DS
=3V,I
D
=10mA
V
DS
=10V,I
D
1.3A,f=2.3GHz
Reverse gate current
*1:TC=25C
P
1dB
G
LP
V
f
method
17.5
1.0
14.3
1
2
2
3
9.4
2-R1.25
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| MGF0910A_1 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:L, S BAND POWER GaAs FET |
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