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參數資料
| 型號： | MGF1801BT |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | TAPE CARRIER MICROWAVE POWER GaAs FET |
| 中文描述： | 膠帶載波微波功率GaAs場效應管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 23K |
| 代理商： | MGF1801BT |
MGF1801B
MITSUBISHI SEMICONDUCTOR GaAs FET
MICROWAVE POWER GaAs FET
Nov. ′97
0.5±0.15
Typ
–
Max
–
–
Min
-8
-8
–
150
-1.5
70
7
Limits
Parameter
Test conditions
DESCRIPTION
The MGF1801B, medium-power GaAs FET with an N-channel
Schottky gate, is designed for use in S to X band amplifiers and
oscillators. The hermetically sealed metalceramic package
assures minimum parasitic losses, and has a configuration suitable
for microstrip circuits.
FEATURES
High output power at 1dB gain compression
P
1dB
=23dBm(TYP.)
High linear power gain
G
LP
=9dB(TYP.)
High reliability and stability
@f=8GHz
@f=8GHz
APPLICATION
S to X band medium-power amplifiers and oscillators.
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
V
DS
=6V
I
D
=100mA
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
(T
a
=25C)
Symbol
Parameter
V
GDO
V
GSO
Gate to source voltage
I
D
Drain current
I
GR
I
GF
Forward gate current
ELECTRICAL CHARACTERISTICS
(T
a
=25C)
Symbol
Unit
V
(BR)GDO
V
(BR)GSO
I
GSS
I
DSS
V
GS(off)
g
m
Gate to drain breakdown voltage
Gate to source breakdown voltage
OUTLINE DRAWING
Unit:millimeters
250
-4.5
–
–
20
V
V
μA
mA
V
mS
dB
–
–
GD-10
Ratings
-8
-8
250
-0.6
1.5
175
P
T
T
ch
T
stg
Unit
V
V
mA
mA
mA
Gate to drain voltage
Total power dissipation *1
Channel temperature
Storage temperature
1.2
-65 to +175
W
C
C
200
–
90
9
GATE
SOURCE
DRAIN
3
2
1
Gate to source leakage current
Saturated drain current
Gate source cut-off voltage
Transconductance
Thermal resistance *1
*1:Channel to ambient
I
G
=-200μA
I
G
=-200μA
V
GS
=-3V,V
DS
=0V
V
GS
=0V,V
DS
=3V
V
DS
=3V,I
D
=100μA
V
DS
=3V,I
D
=100mA
V
DS
=6V,I
D
=100mA,f=8GHz
Reverse gate current
*1:TC=25C
P
1dB
G
LP
R
th(ch-c)
Output power at 1dB gain
compression
Linear power gain
V
f
method
2
3
1
4MIN.
2
4MIN.
0.5±0.15
2.5±0.2
V
DS
=6V,I
D
=100mA,f=8GHz
21.8
–
23.0
–
–
125
dBm
C/W
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