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參數資料
| 型號： | MGF4319 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Super Low Noise InGaAs HEMT |
| 中文描述： | 超低噪音銦鎵砷遷移率晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 33K |
| 代理商： | MGF4319 |
MGF431xG
Super Low Noise InGaAs HEMT
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MITSUBISHI
ELECTRIC
as of Apr.'98
DESCRIPTION
The MGF431xG series super-low-noise HEMT(High Electron
Mobility Transistor) is designed for use in L to K band amplifiers.
The hermetically sealed metal-ceramic package assures
minimum parasitic losses, and has a configuration suitable for
microstrip circuits.
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
dB
Symbol
Parameter
Test conditions
Min.
-3
Typ.
—
Max
—
Unit
Gate to Source cut-off voltage
Transconductance
Associated gain
V
GS
=0V, V
DS
=2V
V
DS
=2V, I
D
=500μA
V
DS
=2V, I
D
=10mA
V
DS
=2V, I
D
=10mA, f=12GHz
V
μA
mA
50
60
-1.5
—
V
Gs
13.5
—
—
625
N
Fmin
Minimum noise figure
Parameter
Ratings
Unit
Gate to drain voltage
-4
V
-4
Gate to source voltage
60
Drain current
mA
Channel temperature
-65 ~ +125
°C
L to K band low noise amplifiers.
APPLICATION
gm
V
GS (off)
0.8
0.5
—
—
—
75
—
Limits
Storage temperature
Total power dissipation
Symbol
V
GDO
V
GSO
I
D
Tch
Tstg
P
T
125
50
mW
V
( Ta=25°C )
—
—
15
-0.1
—
12
—
—
—
OUTLINE DRAWING
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
°C
Gate to source leakage current
Saturated drain current
I
DSS
V
GS
= -2V, V
DS
=0V
mS
FEATURES
Low noise figure @ f=12GHz
MGF4316G : NF min.=0.80dB (MAX.)
MGF4319G : NF min.=0.50dB (MAX.)
High associated gain
Gs=12.0 dB (MIN.) @ f=12GHz
( Ta=25°C )
IG= -10μA
Gate to drain breakdown voltage
V
(BR)GDO
I
GSS
dB
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
V
DS
=2V , I
D
=10mA
Refer to Bias Procedure
MGF4316G
MGF4319G
V
DS
=2V, I
D
=10mA, f=12GHz
C/W
Rth
(ch-a)
*1 : Channel to ambient
Vf method
Thermal resistance
*1
GD-4
相關PDF資料 |
PDF描述 |
|---|---|
| MGF4714CP | PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT |
| MGF491XG | SUPER LOW NOISE InGaAs HEMT |
| MGF4916 | CONTACT |
| MGF4951 | SUPER LOW NOISE InGaAs HEMT |
| MGF7124A | 1.9GHz BAND AMPLIFIER MMIC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MGF4319G | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Super Low Noise InGaAs HEMT |
| MGF431XG | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:Super Low Noise InGaAs HEMT |
| MGF4714CP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT |
| MGF4851A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package) |
| MGF4910D | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:TAPE CARRIER SUPER LOW NOISE INGAAS HEMT |
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