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參數(shù)資料
| 型號： | MGF7170AC |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | UHF BAND GaAs POWER AMPLIFIER |
| 中文描述： | 超高頻波段GaAs功率放大器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 316K |
| 代理商： | MGF7170AC |
Aug. '97
Technical Note
MITSUBISHI ELECTRIC
(1/16)
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with
appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii)
prevention against any malfunction or mishap.
MGF7170AC
UHF BAND GaAs POWER AMPLIFIER
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
Specifications are subject to change without notice.
DESCRIPTION
The MGF7170AC is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
APPLICATION
1.9GHz band handheld phone
QUALITY GRADE
GG
FEATURES
-
Low voltage operation :
Vd=3.0V
-High output power :
Po=28dBm typ. @f=1.715~1.78GHz
-Low distortion :
ACP=-46dBc max. @Po=28dBm
-High efficiency :
Id=520mA typ. @Po=28dBm
-Small size :
7.0 x 6.1 x 1.1 mm
Single voltage operation (NVG include)
Surface mount package
2 Stage Amplifier
External matching circuit is required
Block Diagram of this IC and Application Circuit Example.
Battery
Regulator
VD1
HPA
Pout
Matching
circuit
VD2
VDD2
VDD1
MGF7170AC
Pin
Matching
circuit
VSS
Negative voltage
generator
Pi
Po
Vd1
Vd2
Vg
GND
Ext
CASE
: RF input
: RF output
: Drain bias 1
: Drain bias 2
: Gate bias(positive bias)
: Connect to GND
: Connect to Capacitor
: Connect to GND
GND
Po / Vd2
Pi
GND
Vg
PIN CONFIGURATION
(TOP VIEW)
Vd1
Ext
GND
ES1:different pin configuration
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