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參數資料
| 型號： | MGF7176C |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER |
| 中文描述： | 3級放大器增益控制的超高頻波段GaAs功率放大器 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | MGF7176C |
MGF7176C
MITSUBISHI SEMICONDUCTOR <GaAs MMIC>
3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER
DESCRIPTION
The MGF7176C is a monolithic microwave integrated
circuit for use in CDMA base handheld phone.
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice : This is not a final specification
Some parametric limits are subject to change.
APPLICATION
1.7GHz band handheld phone
QUALITY GRADE
GG
FEATURES
Low voltage operation : Vd=3.0V
High output power : Po=28dBm typ. @f=1.75~1.78GHz
Low distortion : ACP=-46dBc max.
@Po=28dBm,1.25MHz off-set.
as of Feb.'98
PIN CONFIGURATION (TOP VIEW)
GND
OUT
GND
VSS
VD_LEV
VT
GND
IN
(7mmx6.1mmx1mm)
pin pitch 1.0mm
High efficiency : Id=560mA typ. @Po=28dBm
Single voltage operation (NVG include)
Enable to Gain control
Surface mount package
3 Stage Amplifier with gain control
External matching circuit is required
*Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there
is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Block Diagram of this IC and Application Circuit Example.
Battery
Pout
Matching
circuit
VD3
VDD2
VDD1
Pin
Matching
circuit
Negative voltage
generator
VGC
VT
Regulator
GND
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