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參數資料
| 型號： | MJ11028 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTOR(50A,60-120V,300W) |
| 中文描述： | 功率晶體管（50A條,60 - 120伏特的300W） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 153K |
| 代理商： | MJ11028 |
1
Motorola Bipolar Power Transistor Device Data
$!!# #!%
!""#!"
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
Curves to 100 A (Pulsed)
Diode Protection to Rated IC
Monolithic Construction with Built–In Base–Emitter Shunt Resistor
ICM
100
Base Current — Continuous
Peak
IB
PD
2
Adc
Total Power Dissipation @ TC = 25 C
300
Watts
Figure 1. Darlington Circuit Schematic
BASE
EMITTER
COLLECTOR
≈
3.0 k
≈
25
PNP
MJ11029
MJ11031
MJ11033
BASE
EMITTER
COLLECTOR
≈
3.0 k
≈
25
NPN
MJ11028
MJ11030
MJ11032
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11028/D
50 AMPERE
COMPLEMENTARY
SILICON
DARLINGTON
POWER TRANSISTORS
60–120 VOLTS
300 WATTS
*Motorola Preferred Device
CASE 197A–05
TO–204AE (TO–3)
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PDF描述 |
|---|---|
| MJ11029 | POWER TRANSISTOR(50A,60-120V,300W) |
| MJ15004 | 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS |
| MJ15004 | PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
| MJ15004 | POWER TRANSISTORS COMPLEMENTARY SILICON |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ11028 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR DARLINGTON TO-3 |
| MJ11028_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High−Current Complementary Silicon Power Transistors |
| MJ11028_08 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Current Complementary Silicon Power Transistors |
| MJ11028G | 功能描述:達林頓晶體管 50A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJ11029 | 功能描述:達林頓晶體管 50A 60V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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