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參數資料
| 型號： | MJ15011 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | COMPLEMENTARY POWER TRANSISTORS |
| 中文描述： | 10 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | CASE 1-07, TO-3, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 129K |
| 代理商： | MJ15011 |
1
Motorola Bipolar Power Transistor Device Data
The MJ15011 and MJ15012 are PowerBase power transistors designed for
high–power audio, disk head positioners, and other linear applications. These devices
can also be used in power switching circuits such as relay or solenoid drivers,
dc–to–dc converters or inverters.
High Safe Operating Area (100% Tested)
1.2 A @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
hFE = 20 (Min) @ 2 A, 2 V
VCE(sat) = 2.5 V (Max) @ IC = 4 A, IB = 0.4 A
For Low Distortion Complementary Designs
— Peak (1)
15
— Peak (1)
IBM
5
Emitter Current — Continuous
IE
12
Adc
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15011/D
10 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
250 VOLTS
200 WATTS
CASE 1–07
*Motorola Preferred Device
相關PDF資料 |
PDF描述 |
|---|---|
| MJ15012 | 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS |
| MJ15018 | 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
| MJ15019 | 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
| MJ15020 | 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
| MJ15021 | 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MJ15011G | 功能描述:兩極晶體管 - BJT 10A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15011G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJ15012 | 功能描述:兩極晶體管 - BJT 10A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15012G | 功能描述:兩極晶體管 - BJT 10A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15015 | 功能描述:兩極晶體管 - BJT 15A 120V 180W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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