
3–417
Motorola Bipolar Power Transistor Device Data
High Voltage NPN Silicon
Transistors
. . . designed for medium to high voltage inverters, converters, regulators and
switching circuits.
High Collector–Emitter Voltage —
VCEO = 200 Volts
DC Current Gain Specified @ 1.0 and 2.5 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.8 Vdc @ IC = 1.0 Adc
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
200
Vdc
Collector–Base Voltage
VCB
200
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
— Peak
IC
5.0
10
Adc
Base Current
IB
2.0
Adc
Total Device Dissipation @ TC = 75_C
Derate above 75
_C
PD
100
1.33
Watts
W/
_C
Operating Junction Temperature Range
TJ
– 65 to + 150
_C
Storage Temperature Range
Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
0.75
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
200
—
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
—
0.25
mAdc
Collector Cutoff Current
(VCB = 200 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
ICEX
—
0.5
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.5 Adc, VCE = 5.0 Vdc)
hFE
30
10
90
—
—
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.8
Vdc
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
—
1.2
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT
2.5
—
MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJ410
5 AMPERE
POWER TRANSISTOR
NPN SILICON
200 VOLTS
100 WATTS
CASE 1–07
TO–204AA
(TO–3)