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參數資料
| 型號： | MJD148 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | NPN Silicon Power Transistor(NPN硅功率晶體管) |
| 中文描述： | NPN硅功率晶體管（npn型硅功率晶體管） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 66K |
| 代理商： | MJD148 |
Semiconductor Components Industries, LLC, 2005
December, 2005 Rev. 3
1
Publication Order Number:
MJD148/D
MJD148
NPN Silicon Power
Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
High Gain 50 Min @ I
C
= 2.0 A
Low Saturation Voltage 0.5 V @ I
C
= 2.0 A
High Current Gain Bandwidth Product f
T
= 3.0 MHz Min @
I
C
= 250 mAdc
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B; >8000 V
Machine Model, C; >400 V
PbFree Package is Available
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
MAXIMUM RATINGS
Rating
Symbol
V
CEO
Value
Unit
CollectorEmitter Voltage
V
CB
45
CollectorBase Voltage
45
EmitterBase Voltage
V
EB
5.0
Collector Current
Continuous
I
C
4.0
Derate above 25
°
C
0.16
W/
°
C
Total Power Dissipation (Note 1)
A
W/
Temperature Range
Symbol
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase
Thermal Resistance, JunctiontoAmbient
R
JC
Max
Unit
6.25
°
C/W
POWER TRANSISTOR
4.0 AMPERES
45 VOLTS, 20 WATTS
MARKING DIAGRAM
Y
WW
J148
G
= Year
= Work Week
= Device Code
= PbFree Package
Device
Package
Shipping
ORDERING INFORMATION
MJD148T4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 1
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 2
3
4
YWW
J148G
MJD148T4G
DPAK
(PbFree)
2500/Tape & Reel
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MJD148_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon Power Transistor |
| MJD148T4 | 功能描述:兩極晶體管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD148T4G | 功能描述:兩極晶體管 - BJT 4A 45V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD18002D2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor |
| MJD18002D2T4 | 功能描述:兩極晶體管 - BJT BIP NPN 2A 450V TR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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