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參數資料
| 型號： | MJE1320 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 2 A, 900 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 281K |
| 代理商： | MJE1320 |
1
Motorola Bipolar Power Transistor Device Data
Switchmode Series
This transistor is designed for high–voltage, power switching in inductive circuits
where RBSOA and breakdown voltage are critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Fluorescent Lamp Ballasts
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Features:
High VCEV Capability (1800 Volts)
Low Saturation Voltage
100 C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
IC
ICM
Collector Current — Continuous
Peak(1)
2
5
Adc
Base Current — Continuous
IB
1.5
Adc
Derate above 25 C
0.64
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
W/ C
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
Max
1.56
Unit
C/W
Maximum Lead Temperature for Soldering
275
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SWITCHMODE is a trademark of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE1320/D
POWER TRANSISTOR
2 AMPERES
900 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
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