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參數(shù)資料
| 型號： | MJE16002 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN SILICON POWER TRANSISTORS |
| 中文描述： | 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 425K |
| 代理商： | MJE16002 |
1
Motorola Bipolar Power Transistor Device Data
" !
These transistors are designed for high–voltage, high–speed switching of inductive
circuits where fall time and RBSOA are critical. They are particularly well–suited for
line–operated switchmode applications.
The MJE16004 is a high–gain version of the MJE16002 and MJH16002 for
applications where drive current is limited.
Typical Applications:
Switching Regulators
High Resolution Deflection Circuits
Inverters
Motor Drives
Fast Switching Speeds
50 ns Inductive Fall Time @ 75 C (Typ)
70 ns Crossover Time @ 75 C (Typ)
100 C Performance Specified for:
Reverse–Biased SOA
Inductive Switching Times
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Symbol
VCEO(sus)
VCEV
VEB
IC
Value
450
850
Unit
Vdc
Vdc
Emitter–Base Voltage
6.0
Vdc
Collector Current — Continuous
5.0
Adc
@ TC = 100 C
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
32
W/ C
THERMAL CHARACTERISTICS
C
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
TL
Max
1.56
Unit
C/W
Lead Temperature for Soldering Purposes: 1/8
″
from Case for 5 Seconds
275
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
C
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE16002/D
5.0 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
80 WATTS
*Motorola Preferred Device
CASE 221A–06
TO–220AB
REV 2
相關PDF資料 |
PDF描述 |
|---|---|
| MJE16002 | POWER TRANSISTORS(5A,450V,80W) |
| MJE253 | 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS |
| MJE243 | POWER TRANSISTORS COMPLEMENTARY SILICON |
| MJE243 | 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS |
| MJE2955T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJE16004 | 制造商:ON Semiconductor 功能描述:Trans GP BJT NPN 450V 5A 3-Pin(3+Tab) TO-220AB 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJE16106 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER TRANSISTORS 8 AMPERES 400 VOLTS 100 AND 125 WATTS |
| MJE16204 | 制造商:ON Semiconductor 功能描述:TRANSISTOR, NPN TO-220 |
| MJE170 | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE170G | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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