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參數資料
| 型號： | MJE1320AS |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數： | 1/63頁 |
| 文件大小： | 434K |
| 代理商： | MJE1320AS |
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3–620
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
NPN Silicon Power Transistor
Switchmode Series
This transistor is designed for high–voltage, power switching in inductive circuits
where RBSOA and breakdown voltage are critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Fluorescent Lamp Ballasts
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Features:
High VCEV Capability (1800 Volts)
Low Saturation Voltage
100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
900
Vdc
Collector–Emitter Voltage
VCEV
1800
Vdc
Emitter Base Voltage
VEB
9
Vdc
Collector Current — Continuous
Peak(1)
IC
ICM
2
5
Adc
Base Current — Continuous
Peak(1)
IB
IBM
1.5
2.5
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25
_C
PD
80
32
0.64
Watts
W/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.56
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE1320
POWER TRANSISTOR
2 AMPERES
900 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
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