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參數資料
| 型號： | MMBD6100LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Monolithic Dual Switching Diode |
| 中文描述： | 0.2 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 60K |
| 代理商： | MMBD6100LT1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 2
1
Publication Order Number:
MMBD6100LT1/D
MMBD6100LT1
Monolithic Dual
Switching Diode
Features
PbFree Packages are Available
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, FR5 Board
(Note 1)
T
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina Substrate
(Note 2)
T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100 Adc)
V
(BR)
70
Vdc
Reverse Voltage Leakage Current
(V
= 50 Vdc)
(For each individual diode while the
second diode is unbiased)
I
R
0.1
Adc
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 100 mAdc)
V
F
0.55
0.8
0.7
1.1
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc)
(Figure 1)
t
rr
4.0
ns
Capacitance
(V
R
= 0 V)
C
2.5
pF
Device
Package
Shipping
ORDERING INFORMATION
MMBD6100LT1
SOT23
3000/Tape & Reel
SOT23
CASE 318
STYLE 9
3
CATHODE
2
ANODE
ANODE
1
MMBD6100LT3
SOT23
10,000/Tape & Reel
DEVICE MARKING
1
5B M
5B
M
= Specific Device Code
= Date Code*
= PbFree Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBD6100LT3G
SOT23
(PbFree)
10,000/Tape & Reel
3000/Tape & Reel
MMBD6100LT1G
SOT23
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
(Note: Microdot may be in either location)
1
2
3
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD6100LT1G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MMBD6100LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Monolithic Dual Switching Diode |
| MMBD6100LT3 | 功能描述:二極管 - 通用，功率，開關 70V 200mA RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD6100LT3G | 功能描述:二極管 - 通用，功率，開關 70V 200mA RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD6100-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
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