- 您現在的位置：買賣IC網 > PDF目錄384741 > MMBD914LT3G (ON SEMICONDUCTOR) High−Speed Switching Diode PDF資料下載
參數資料
| 型號： | MMBD914LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High−Speed Switching Diode |
| 中文描述： | 0.2 A, 100 V, SILICON, SIGNAL DIODE, TO-236AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, TO-236, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 59K |
| 代理商： | MMBD914LT3G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 5
1
Publication Order Number:
MMBD914LT1/D
MMBD914LT1
Preferred Device
HighSpeed Switching
Diode
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
100
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR5 Board (Note 1)
T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100 Adc)
V
(BR)
100
Vdc
Reverse Voltage Leakage Current
(V
R
= 20 Vdc)
(V
R
= 75 Vdc)
I
R
25
5.0
nAdc
Adc
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
T
4.0
pF
Forward Voltage
(I
F
= 10 mAdc)
V
F
1.0
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
t
rr
4.0
ns
1. FR5 = 1.0
2. Alumina = 0.4
0.75
0.3
0.062 in.
0.024 in. 99.5% alumina.
Device
Package
Shipping
ORDERING INFORMATION
SOT23
CASE 318
STYLE 8
MMBD914LT1
SOT23
3000/Tape & Reel
MARKING DIAGRAM
1
ANODE
3
CATHODE
Preferred
devices are recommended choices for future use
and best overall value.
MMBD914LT1G
SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
MMBD914LT3G
SOT23
(PbFree)
10,000/Tape & Reel
1
5D M
5D
M
= Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBD914LT3
SOT23
10,000/Tape & Reel
2
1
3
相關PDF資料 |
PDF描述 |
|---|---|
| MMBF0201NLT1G | Power MOSFET 300 mAmps, 20 Volts N−Channel SOT−23 |
| MMBF2201NT1G | Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323 |
| MMBF2202PT1G | Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323 |
| MMBT3903 | NPN (GENERAL PURPOSE TRANSISTOR) |
| MMBT4123 | NPN (GENERAL PURPOSE TRANSISTOR) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBD914LT3HTMA1 | 制造商:Infineon Technologies AG 功能描述:Diode Switching 100V 0.25A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF DIODES - Tape and Reel 制造商:Infineon Technologies AG 功能描述:DIODE SW 100V 0.25A SOT23-3 |
| MMBD914LT3T | 制造商:Infineon Technologies AG 功能描述:AF DIODE SOT23 T&R 10K WITH MM |
| MMBD914PT | 制造商:CHENMKO 制造商全稱:Chenmko Enterprise Co. Ltd. 功能描述:SWITCHING DIODE |
| MMBD914T | 功能描述:二極管 - 通用，功率，開關 100V RoHS:否 制造商:STMicroelectronics 產品:Switching Diodes 峰值反向電壓:600 V 正向連續電流:200 A 最大浪涌電流:800 A 配置: 恢復時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMBD914-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 100V 0.15A 3-Pin SOT-23 T/R |
發布緊急采購，3分鐘左右您將得到回復。