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參數資料
| 型號： | MMBF4392LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | JFET Switching Transistors N-Channel |
| 中文描述： | 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 90K |
| 代理商： | MMBF4392LT1G |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 5
1
Publication Order Number:
MMBF4391LT1/D
MMBF4391LT1,
MMBF4392LT1,
MMBF4393LT1
JFET Switching Transistors
NChannel
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DS
30
Vdc
DrainGate Voltage
V
DG
30
Vdc
GateSource Voltage
V
GS
30
Vdc
Forward Gate Current
I
G(f)
50
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0
0.75
0.062 in.
Preferred
devices are recommended choices for future use
and best overall value.
SOT23
CASE 318
STYLE 10
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
6x
M
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING DIAGRAM
1
2
1
3
6x M
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBF4392LT1G | 制造商:ON Semiconductor 功能描述:JFET |
| MMBF4393 | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4393_Q | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4393_S00Z | 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF4393LT1 | 功能描述:JFET 30V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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