- 您現在的位置：買賣IC網 > PDF目錄382338 > MMBT2131T3 (ON SEMICONDUCTOR) General Purpose Transistors PDF資料下載
參數資料
| 型號： | MMBT2131T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 700 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318F-02, SC-59, 6 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 115K |
| 代理商： | MMBT2131T3 |
3–1
Motorola Bipolar Power Transistor Device Data
Motorola, Inc. 1998
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
IB
PD
PD
RJA
30
V
Collector–Base Voltage
40
V
Emitter–Base Voltage
5.0
V
Collector Current
700
mA
Base Current
350
mA
Total Power Dissipation @ TC = 25
°
C
Total Power Dissipation @ TC = 85
°
C
Thermal Resistance — Junction to Ambient (1)
342
178
366
mW
mW
°
C/W
Total Power Dissipation @ TC = 25
°
C
Total Power Dissipation @ TC = 85
°
C
Thermal Resistance — Junction to Ambient (2)
PD
PD
RJA
665
346
188
mW
mW
°
C/W
Operating and Storage Temperature Range
TJ, Tstg
–55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
(IC = 100 Adc)
V(BR)CBO
40
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
30
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 Adc)
V(BR)EBO
5.0
—
—
Vdc
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125
°
C)
ICBO
—
—
—
—
1.0
10
Adc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
ON CHARACTERISTICS
IEBO
—
—
10
Adc
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150
—
—
Vdc
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
—
—
0.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
—
—
0.4
Vdc
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
—
—
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
—
1.0
Vdc
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2
″
square FR–4 Board (1
″
sq. 2 oz Cu 0.06
″
thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Order this document
by MMBT2131T1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
4
CASE 318F–02, STYLE 2
SC–59 — 6 Lead
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
COLLECTOR
PINS 2, 5
BASE
PIN 6
EMITTER
PIN 3
3
PNP
5
6
相關PDF資料 |
PDF描述 |
|---|---|
| MMBT2132T1 | 43632 LOGIC CELLS 12 ROCKET IOS 2 POWER |
| MMBT2132T3 | General Purpose Transistors |
| MMBT2222ATT1 | General Purpose Transistor |
| MMBT2222ATTD | General Purpose Transistor |
| MMBT3906L | General Purpose Transistor(NPN Silicon) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2132T1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMBT2132T3 | 功能描述:兩極晶體管 - BJT 700mA NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2132T3_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Bipolar Junction Transistor |
| MMBT2132T3G | 功能描述:兩極晶體管 - BJT 700mA NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。