- 您現在的位置：買賣IC網 > PDF目錄382338 > MMBT2131T3 (ON SEMICONDUCTOR) General Purpose Transistors PDF資料下載
參數資料
| 型號： | MMBT2131T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 700 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318F-02, SC-59, 6 PIN |
| 文件頁數： | 4/4頁 |
| 文件大小： | 115K |
| 代理商： | MMBT2131T3 |
3–4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 318F–02
ISSUE C
STYLE 2:
PIN 1. NO CONNECTION
2. COLLECTOR
3. EMITTER
4. NO CONNECTION
5. COLLECTOR
6. BASE
2
3
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
A
B
C
D
G
H
J
K
L
M
S
MIN
0.1063
0.0512
0.0394
0.0098
0.0335
0.0005
0.0040
0.0079
0.0493
MAX
0.1220
0.0669
0.0511
0.0157
0.0413
0.0040
0.0102
0.0236
0.0649
10
0.1181
MIN
2.70
1.30
1.00
0.25
0.85
0.013
0.10
0.20
1.25
MAX
3.10
1.70
1.30
0.40
1.05
0.100
0.26
0.60
1.65
10
3.00
MILLIMETERS
INCHES
0
0
0.0985
2.50
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
M
J
K
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed
: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447
JAPAN
: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141,
4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488
Customer Focus Center: 1–800–521–6274
Mfax
: RMFAX0@email.sps.mot.com – TOUCHTONE 1–602–244–6609
Motorola Fax Back System
ASIA/PACIFIC
: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
– US & Canada ONLY 1–800–774–1848
– http://sps.motorola.com/mfax/
HOME PAGE
: http://motorola.com/sps/
相關PDF資料 |
PDF描述 |
|---|---|
| MMBT2132T1 | 43632 LOGIC CELLS 12 ROCKET IOS 2 POWER |
| MMBT2132T3 | General Purpose Transistors |
| MMBT2222ATT1 | General Purpose Transistor |
| MMBT2222ATTD | General Purpose Transistor |
| MMBT3906L | General Purpose Transistor(NPN Silicon) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2132T1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMBT2132T3 | 功能描述:兩極晶體管 - BJT 700mA NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2132T3_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors NPN Bipolar Junction Transistor |
| MMBT2132T3G | 功能描述:兩極晶體管 - BJT 700mA NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222 | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。