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參數資料
| 型號： | MMBT2222ATT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | General Purpose Transistor |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 463-01, SC-75, 3 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 124K |
| 代理商： | MMBT2222ATT1 |
MMBT2222ATT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
—
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
75
—
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
6.0
—
Vdc
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB
= 3.0 Vdc)
I
BL
—
20
nAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB
= 3.0 Vdc)
I
CEX
—
10
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
H
FE
35
50
75
100
40
—
—
—
—
—
—
CollectorEmitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
—
—
0.3
1.0
Vdc
BaseEmitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
—
1.2
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300
—
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
—
8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
—
30
pF
Input Impedance
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
ie
0.25
1.25
k ohms
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
re
—
4.0
X 10
4
SmallSignal Current Gain
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
fe
75
375
—
Output Admittance
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
oe
25
200
mhos
Noise Figure
(V
CE
= 10 Vdc, I
C
= 100 Adc, R
S
= 1.0 k ohms, f = 1.0 kHz)
NF
—
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
= 3.0 Vdc, V
= 0.5 Vdc,
(V
CC
3.0 Vdc, V
BE
0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
—
10
ns
Rise Time
t
r
—
25
Storage Time
= 30 Vdc, I
= 150 mAdc,
(V
CC
30 Vdc, I
C
150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
—
225
ns
Fall Time
t
f
—
60
2. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2.0%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2222ATT1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
| MMBT2222ATT1G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222ATT3G | 功能描述:兩極晶體管 - BJT SS GP XSTR NPN 75V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222ATTD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
| MMBT2222AT-TP | 功能描述:兩極晶體管 - BJT 600mA 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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