- 您現在的位置：買賣IC網 > PDF目錄382338 > MMBT3906L (ON SEMICONDUCTOR) General Purpose Transistor(NPN Silicon) PDF資料下載
參數資料
| 型號： | MMBT3906L |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | General Purpose Transistor(NPN Silicon) |
| 中文描述： | 通用晶體管（NPN硅） |
| 文件頁數： | 2/6頁 |
| 文件大小： | 101K |
| 代理商： | MMBT3906L |
MMBT3904LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
Vdc
CollectorBase Breakdown Voltage (I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage (I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
6.0
Vdc
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
BL
50
nAdc
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
CEX
50
nAdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
H
FE
40
70
100
60
30
300
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
0.2
0.3
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
0.85
0.95
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300
MHz
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
4.0
pF
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
8.0
pF
Input Impedance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
ie
1.0
10
k ohms
Voltage Feedback Ratio (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
re
0.5
8.0
X 10
4
SmallSignal Current Gain (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
fe
100
400
Output Admittance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
oe
1.0
40
mhos
Noise Figure (V
CE
= 5.0 Vdc, I
C
= 100 Adc, R
S
= 1.0 k ohms, f = 1.0 kHz)
NF
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
t
d
35
ns
Rise Time
t
r
35
Storage Time
(V
CC
= 3.0 Vdc,
t
s
200
ns
Fall Time
I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
t
f
50
3. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
C
S
< 4 pF*
+3 V
275
10 k
C
S
< 4 pF*
< 1 ns
0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
9.1 V
′
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 s
* Total shunt capacitance of test jig and connectors
相關PDF資料 |
PDF描述 |
|---|---|
| MMBT3904L | General Purpose Transistor(NPN Silicon) |
| MMBT589LT1 | High Current Surface Mount PNP Silicon Switching Transistor |
| MMBTA28-7 | MicroPower Single-Supply Operational Amplifier MicroAmplifier(TM) Series 14-TSSOP |
| MMBTA28 | MicroPower Single-Supply Operational Amplifier MicroAmplifier(TM) Series 14-TSSOP |
| MMBTH10-4LT1 | VHF/UHF Transistor (NPN Silicon) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT3906L-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
| MMBT3906L-AL3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:GENERAL PURPOSE APPLIATION |
| MMBT3906LP | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT3906LP-7 | 功能描述:兩極晶體管 - BJT BIPOLAR TRANS PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT3906LP-7B | 功能描述:兩極晶體管 - BJT General Purpose Tran X1-DFN1006-3,10K RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。