- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385626 > MMBT4124LT1 (ON SEMICONDUCTOR) General Purpose Transistor NPN Silicon(硅NPN通用晶體管) PDF資料下載
參數(shù)資料
| 型號： | MMBT4124LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistor NPN Silicon(硅NPN通用晶體管) |
| 中文描述： | 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | CASE 318-08, TO-236, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 79K |
| 代理商： | MMBT4124LT1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 1
1
Publication Order Number:
MMBT4124LT1/D
MMBT4124LT1
General Purpose Transistor
NPN Silicon
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
25
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
FR5 Board (Note 1) @T
A
= 25
°
C
Derate above 25
°
C
P
D
225
1.8
W
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
556
°
C/W
Total Device Dissipation Alumina
Substrate (Note 2) @T
A
= 25
°
C
Derate above 25
°
C
P
D
300
2.4
W
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
417
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
1. FR5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
SOT23 (TO236)
CASE 318
STYLE 6
MARKING DIAGRAM
3
ZC M
COLLECTOR
3
1
BASE
2
EMITTER
1
2
Device
Package
Shipping
ORDERING INFORMATION
MMBT4124LT1
SOT23
3000 / Tape & Reel
ZC
M
= Device Code
= Date Code*
= PbFree Package
http://onsemi.com
MMBT4124LT1G
SOT23
(PbFree)
3000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
(Note: Microdot may be in either location)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT489LT1 | High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications |
| MMBT489LT1_06 | High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications |
| MMBT489LT1G | High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications |
| MMBT5550LT1 | High Voltage Transistors NPN Silicon(NPN型高電壓晶體管) |
| MMBT589LT1G | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT4124LT1G | 功能描述:兩極晶體管 - BJT 200mA 30V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4125LT1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMBT4126 | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4126_Q | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT4126-7 | 功能描述:兩極晶體管 - BJT -25V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。