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參數資料
| 型號： | MMBTH10D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/14頁 |
| 文件大小： | 738K |
| 代理商： | MMBTH10D87Z |
NPN RF Transistor
This device is designed for use in low noise UHF/VHF amplifiers,
with collector currents in the 100
A to 20 mA range in common
emitter or common base mode of operations, and in low frequency
drift, high output UHF oscillators. Sourced from Process 42.
MPSH10
MMBTH10
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
25
V
VCBO
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
3.0
V
IC
Collector Current - Continuous
50
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
C
E
B
TO-92
C
B
E
SOT-23
Mark: 3E
Symbol
Characteristic
Max
Units
MPSH10
*MMBTH10
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
225
1.8
mW
mW/
°C
RθJC
Thermal Resistance, Junction to Case
125
°C/W
RθJA
Thermal Resistance, Junction to Ambient
357
556
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
1997 Fairchild Semiconductor Corporation
MPSH10
/
MMBTH10
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