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參數資料
| 型號： | MMDF1N05E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM |
| 中文描述： | 2 A, 50 V, 0.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 169K |
| 代理商： | MMDF1N05E |
DUAL TMOS MOSFET
50 VOLTS
1.5 AMPERE
RDS(on) = 0.30 OHM
D
S
G
Source–1
Gate–1
Source–2
Gate–2
1
2
3
4
8
7
6
5
Top View
Drain–1
Drain–1
Drain–2
Drain–2
CASE 751–05, Style 11
SO–8
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s TMOS process. These miniature surface
mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode
has a low reverse recovery time. MiniMOS devices are designed
for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dc–dc
converters, and power management in portable and battery
powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor
controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
IDSS Specified at Elevated Temperature
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
VGS
ID
IDM
50
Volts
Gate–to–Source Voltage — Continuous
±
20
Volts
Drain Current — Continuous
Drain Current
— Pulsed
2.0
10
Amps
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 V, VGS = 10 V, IL = 2 Apk)
EAS
300
mJ
Operating and Storage Temperature Range
TJ, Tstg
PD
R
θ
JA
TL
–55 to 150
°
C
Total Power Dissipation @ TA = 25
°
C
Thermal Resistance – Junction to Ambient (1)
2.0
Watts
62.5
°
C/W
Maximum Temperature for Soldering,
Time in Solder Bath
260
10
°
C
Sec
DEVICE MARKING
F1N05
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMDF1N05ER2
13
″
12 mm embossed tape
2500
MiniMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
REV 5
Order this document
by MMDF1N05E/D
SEMICONDUCTOR TECHNICAL DATA
相關PDF資料 |
PDF描述 |
|---|---|
| MMDF2C01HD | COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
| MMDF2C02HD | COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 20 VOLTS |
| MMDF2C03HD | COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| MMDF2N02E | DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDF1N05ER2 | 功能描述:MOSFET 50V 1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF1N05ER2G | 功能描述:MOSFET NFET SO8D 50V 200mA 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF1N05ER2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2C01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 12 VOLTS |
| MMDF2C02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:COMPLEMENTARY DUAL TMOS POWER FET 2.5 AMPERES 25 VOLTS |
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