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參數資料
| 型號： | MMDF2C03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS |
| 中文描述： | 2 A, 30 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-05, SOIC-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 381K |
| 代理商： | MMDF2C03HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain-to-source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are
switched and offer additional safety margin against unexpected
voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO-8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO-8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)(1)
Rating
Symbol
VDSS
VGS
ID
Value
30
±
20
4.1
3.0
21
15
– 55 to 150
2.0
62.5
Unit
Vdc
Vdc
A
Drain–to–Source Voltage
Gate–to–Source Voltage
Drain Current — Continuous N–Channel
P–Channel
N–Channel
P–Channel
Drain Current
— Pulsed
IDM
Operating and Storage Temperature Range
Total Power Dissipation @ TA= 25
°
C (2)
Thermal Resistance — Junction to Ambient (2)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0 Apk, L = 8.0 mH, RG = 25
)
(VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0 Apk, L = 18 mH, RG = 25
)
Maximum Lead Temperature for Soldering, 0.0625
″
from case. Time in Solder Bath is 10 seconds.
DEVICE MARKING
D2C03
(1) Negative signs for P–Channel device omitted for clarity.
(2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided) with one die operating, 10 sec. max.
ORDERING INFORMATION
TJ, Tstg
PD
R
θ
JA
EAS
°
C
Watts
°
C/W
mJ
N–Channel
P–Channel
324
324
260
TL
°
C
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMDF2C03HDR2
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMDF2C03HD/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
P–Channel
D
S
G
N–Channel
CASE 751–05, Style 14
SO–8
COMPLEMENTARY
DUAL TMOS POWER FET
2.0 AMPERES
30 VOLTS
RDS(on) = 0.070 OHM
(N-CHANNEL)
RDS(on) = 0.200 OHM
(P-CHANNEL)
Motorola Preferred Device
N–Source
N–Gate
P–Source
P–Gate
1
2
3
4
8
7
6
5
Top View
N–Drain
N–Drain
P–Drain
P–Drain
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 5
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDF2C03HDR2 | 功能描述:MOSFET 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2C03HDR2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2N02E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
| MMDF2N02ER2 | 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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