- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385628 > MMDF2N02E (ON SEMICONDUCTOR) Power MOSFET 2 Amps, 25 Volts N Channel SO8, Dual(2A,25V,SO-8,N溝道功率雙MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | MMDF2N02E |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 2 Amps, 25 Volts N Channel SO8, Dual(2A,25V,SO-8,N溝道功率雙MOSFET) |
| 中文描述： | 功率MOSFET 2安培，25伏特?頻道SO8封裝，雙（第2A，25V的，SO - 8封裝，?溝道功率雙MOSFET的） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 94K |
| 代理商： | MMDF2N02E |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 7
1
Publication Order Number:
MMDFN02E/D
MMDF2N02E
Power MOSFET
2 Amps, 25 Volts
NChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a low reverse recovery time. MiniMOS
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dcdc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
I
DSS
Specified at Elevated Temperatures
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
E
AS
25
Vdc
GatetoSource Voltage Continuous
±
20
Vdc
Drain Current Continuous @ T
A
= 25
°
C
Drain Current
Continuous @ T
A
= 100
°
C
Drain Current
Single Pulse (t
p
≤
10 s)
3.6
2.5
18
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Operating and Storage Temperature Range
2.0
W
55 to 150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C (V
DD
= 20 Vdc,
V
GS
= 10 Vdc, Peak I
L
= 9.0 Apk,
L = 6.0 mH, R
G
= 25
)
Thermal Resistance, JunctiontoAmbient
(Note 1)
245
mJ
R
JA
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 0.0625
″
from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with
one die operating, 10 sec. max.
T
L
260
°
C
Source1
1
2
3
4
8
7
6
5
Gate1
Source2
Gate2
Drain1
Drain1
Drain2
Drain2
2 AMPERES, 25 VOLTS
R
DS(on)
= 100 m
Device
Package
Shipping
ORDERING INFORMATION
MMDF2N02ER2
SO8
2500 Tape & Reel
NChannel
PIN ASSIGNMENT
D
S
G
http://onsemi.com
MMDF2N02ER2G
SO8
(PbFree)
2500 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Discrete
(PbFree)
SO8
CASE 751
STYLE 11
MARKING
DIAGRAM
F2N02
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
F2N02
AYWW
1
8
1
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMDF3N04HDR2 | Power MOSFET 3 Amps, 40 Volts |
| MMDF3N04HD | Power MOSFET 3 Amps, 40 Volts N Channel SO8, Dual(3A,40V,SO-8,N溝道功率雙MOSFET) |
| MMDL914T1 | High Speed Switching Diode(高速開關(guān)二極管) |
| MMFT2955E | Power MOSFET 1 Amp, 60 Volts P-Channel(1A，60V，P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| MMFT2N02EL | Power MOSFET 2 Amps, 20 Volts N-Channel(2A，20V，N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF2N02ER2 | 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2N02ER2G | 功能描述:MOSFET NFET SO8D 25V 3.6A 100mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2N05ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MMDF2N06V | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS |
| MMDF2N06VL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。