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參數(shù)資料
| 型號(hào)： | MMDL914T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High Speed Switching Diode(高速開關(guān)二極管) |
| 中文描述： | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| 封裝： | CASE 477-02, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | MMDL914T1 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 3
1
Publication Order Number:
MMDL914T1/D
MMDL914T1
Preferred Device
HighSpeed Switching
Diode
Features
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
100
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
T
A
= 25
°
C (Note 1)
Derate above 25
°
C
P
D
200
1.57
mW
mW/
°
C
Thermal Resistance,
JunctiontoAmbient
R
JA
635
°
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to 150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR-4 Minimum Pad.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100 Adc)
V
(BR)
100
Vdc
Reverse Voltage Leakage Current
(V
R
= 20 Vdc)
(V
R
= 75 Vdc)
I
R
25
5.0
nAdc
Adc
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
T
4.0
pF
Forward Voltage
(I
F
= 10 mAdc)
V
F
1.0
Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
t
rr
4.0
ns
http://onsemi.com
SOD323
CASE 477
STYLE 1
MARKING DIAGRAM
1
CATHODE
2
ANODE
Device
Package
Shipping
ORDERING INFORMATION
MMDL914T1
SOD323
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
5D M
Preferred
devices are recommended choices for future use
and best overall value.
MMDL914T1G
SOD323
(PbFree)
3000 / Tape & Reel
5D
M
= Specific Device Code
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDL914T1G | 功能描述:二極管 - 通用，功率，開關(guān) 100V 200mA RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| MMDL914T1G | 制造商:ON Semiconductor 功能描述:SWITCHING DIODE 200mA 100V SOD-323 |
| MMDL914T1G_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Speed Switching Diode |
| MMDL914T1H | 制造商:ON Semiconductor 功能描述: |
| MMDL914T3G | 功能描述:二極管 - 通用，功率，開關(guān) SS SWITCHING DIODE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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