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參數資料
型號: MMDF3C03HD
廠商: Motorola, Inc.
英文描述: COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS
中文描述: 互補對偶的TMOS功率場效應晶體管30伏
文件頁數: 11/12頁
文件大小: 272K
代理商: MMDF3C03HD
11
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones and a figure
for belt speed. Taken together, these control settings make up
a heating “profile” for that particular circuit board. On
machines controlled by a computer, the computer remembers
these profiles from one operating session to the next. Figure
16 shows a typical heating profile for use when soldering a
surface mount device to a printed circuit board. This profile will
vary among soldering systems, but it is a good starting point.
Factors that can affect the profile include the type of soldering
system in use, density and types of components on the board,
type of solder used, and the type of board or substrate material
being used. This profile shows temperature versus time. The
line on the graph shows the actual temperature that might be
experienced on the surface of a test board at or near a central
solder joint. The two profiles are based on a high density and
a low density board. The Vitronics SMD310 convection/in-
frared reflow soldering system was used to generate this
profile. The type of solder used was 62/36/2 Tin Lead Silver
with a melting point between 177–189
°
C. When this type of
furnace is used for solder reflow work, the circuit boards and
solder joints tend to heat first. The components on the board
are then heated by conduction. The circuit board, because it
has a large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may be
up to 30 degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK”
STEP 3
HEATING
ZONES 2 & 5
“RAMP”
STEP 4
HEATING
ZONES 3 & 6
“SOAK”
STEP 5
HEATING
ZONES 4 & 7
“SPIKE”
170
°
C
STEP 6
VENT
STEP 7
COOLING
200
°
C
150
°
C
100
°
C
50
°
C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205
°
TO 219
°
C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100
°
C
150
°
C
160
°
C
140
°
C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
Figure 16. Typical Solder Heating Profile
相關PDF資料
PDF描述
MMDF3N02HDR2 TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR
MMDF3NO2HD TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR
MMDF3N02HD DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
MMDF3N03HD DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS
MMDF3N03HD Power MOSFET 3 Amps, 30 Volts
相關代理商/技術參數
參數描述
MMDF3N02HD 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL
MMDF3N02HDR2 功能描述:MOSFET 20V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF3N02HDR2G 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF3N03HD 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts
MMDF3N03HDR2 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R
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