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參數(shù)資料
| 型號： | MMDF3C03HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| 中文描述： | 互補(bǔ)對偶的TMOS功率場效應(yīng)晶體管30伏 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 272K |
| 代理商： | MMDF3C03HD |
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
ID, DRAIN CURRENT (AMPS)
1.5
1.0
0.18
0.12
0.10
0.08
0.06
0.04
2.0
4.0
5.5
3.0
4.5
5.0
2.5
R
,
D
TJ = 25
°
C
VGS = 4.5 V
10 V
3.5
0.16
0.14
–25
25
–50
TJ, JUNCTION TEMPERATURE (
°
C)
1.2
0.8
0.6
0.4
0.2
0
0
,
R
50
100
75
1.0
125
150
1.6
1.4
VGS = 10 V
ID = 1.5 A
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
30
0
100
1.0
15
10
20
25
10
I
VGS = 0 V
TJ = 125
°
C
100
°
C
ID, DRAIN CURRENT (AMPS)
2.0
1.0
0.050
0.045
0.040
0.035
0.030
0.025
3.0
4.0
5.0
6.0
7.0
8.0
9.0
R
,
D
TJ = 25
°
C
VGS = 4.5 V
10 V
–25
25
–50
TJ, JUNCTION TEMPERATURE (
°
C)
1.2
0.8
0.6
0.4
0.2
0
0
,
R
50
100
75
1.0
125
150
1.6
1.4
1.8
VGS = 10 V
ID = 3 A
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
5.0
30
0
1000
100
1.0
0.1
15
10
20
25
10
I
VGS = 0 V
TJ = 125
°
C
100
°
C
25
°
C
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PDF描述 |
|---|---|
| MMDF3N02HDR2 | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3NO2HD | TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR |
| MMDF3N02HD | DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| MMDF3N03HD | DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS |
| MMDF3N03HD | Power MOSFET 3 Amps, 30 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF3N02HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL |
| MMDF3N02HDR2 | 功能描述:MOSFET 20V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N02HDR2G | 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N03HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R |
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