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參數資料
| 型號： | MMDF3C03HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| 中文描述： | 互補對偶的TMOS功率場效應晶體管30伏 |
| 文件頁數： | 6/12頁 |
| 文件大小： | 272K |
| 代理商： | MMDF3C03HD |
6
Motorola TMOS Power MOSFET Transistor Device Data
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
V
20
10
30
0
0
6.0
3.0
0
Qg, TOTAL GATE CHARGE (nC)
V
2.0
4.0
6.0
8.0
14
ID = 3 A
TJ = 25
°
C
10
12
VDS
VGS
Q2
Q3
Q1
16
7.0
4.0
5.0
2.0
1.0
QT
RG, GATE RESISTANCE (OHMS)
1.0
10
100
100
10
1.0
t
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25
°
C
tr
tf
td(off)
td(on)
1000
V
20
10
30
0
0
6.0
5.0
3.0
2.0
1.0
0
Qg, TOTAL GATE CHARGE (nC)
V
12
11
9.0
8.0
2.0
4.0
6.0
8.0
14
ID = 5 A
TJ = 25
°
C
10
12
VDS
VGS
QT
Q2
Q3
Q1
16
7.0
4.0
10
RG, GATE RESISTANCE (OHMS)
1.0
10
100
100
10
1.0
t
VDD = 15 V
ID = 6 A
VGS = 10 V
TJ = 25
°
C
tr
tf
td(off)
td(on)
1000
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMDF3N02HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL |
| MMDF3N02HDR2 | 功能描述:MOSFET 20V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N02HDR2G | 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF3N03HD | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts |
| MMDF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R |
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