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參數資料
型號: MMFT2N02EL
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: SPST, 150mA PC Mount Pushbutton
中文描述: 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
封裝: CASE 318E-04, 4 PIN
文件頁數: 2/10頁
文件大小: 250K
代理商: MMFT2N02EL
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage, (VGS = 0, ID = 250
μ
A)
Zero Gate Voltage Drain Current, (VDS = 20 V, VGS = 0)
Gate–Body Leakage Current, (VGS = 15 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
20
Vdc
10
μ
Adc
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
Static Drain–to–Source On–Resistance, (VGS = 5 V, ID = 0.8 A)
Drain–to–Source On–Voltage, (VGS = 5 V, ID = 1.6 A)
Forward Transconductance, (VDS = 10 V, ID = 0.8 A)
VGS(th)
RDS(on)
VDS(on)
gFS
1
2
Vdc
0.15
Ohms
0.32
Vdc
2.6
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1 MHz)
Ciss
Coss
Crss
580
pF
Output Capacitance
(VDS = 15 V,
VGS = 0,
430
Reverse Transfer Capacitance
250
SWITCHING CHARACTERISTICS
Turn–On Delay Time
RGS = 25 ohms)
td(on)
tr
td(off)
tf
Qg
16
Rise Time
(VDD = 15 V, ID = 1.6 A
VGS = 5 V, RG = 50 ohms,
73
ns
Turn–Off Delay Time
77
Fall Time
107
Total Gate Charge
See Figures 15 and 16
20
nC
Gate–Source Charge
(VDS = 16 V, ID = 1.6 A,
VGS = 5 Vdc)
Qgs
Qgd
1.7
Gate–Drain Charge
6
SOURCE DRAIN DIODE CHARACTERISTICS(1)
Forward On–Voltage
IS = 1.6 A, VGS = 0
VSD
ton
0.9
Vdc
Forward Turn–On Time
IS = 1.6 A, VGS = 0,
VR = 16 V
Limited by stray inductance
Reverse Recovery Time
dlS/dt = 400 A/
μ
s,
trr
55
ns
(1) Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2%
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相關代理商/技術參數
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