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參數資料
| 型號： | MMFT2N02EL |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SPST, 150mA PC Mount Pushbutton |
| 中文描述： | 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數： | 7/10頁 |
| 文件大小： | 250K |
| 代理商： | MMFT2N02EL |
7
Motorola TMOS Power MOSFET Transistor Device Data
INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must be
the correct size to insure proper solder connection interface
between the board and the package. With the correct pad
geometry, the packages will self align when subjected to a
solder reflow process.
SOT–223
0.079
2.0
0.15
3.8
0.248
6.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
0.091
2.3
0.091
2.3
mm
inches
SOT–223 POWER DISSIPATION
The power dissipation of the SOT–223 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined by
TJ(max), the maximum rated junction temperature of the die,
R
θ
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the values
provided on the data sheet for the SOT–223 package, PD can
be calculated as follows:
PD =
TJ(max) – TA
R
θ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
°
C, one can
calculate the power dissipation of the device which in this case
is 800 milliwatts.
PD =150
°
C – 25
°
C
156
°
C/W
= 800 milliwatts
The 156
°
C/W for the SOT–223 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 800 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–223 package. One is to increase the area of the
drain pad. By increasing the area of the drain pad, the power
dissipation can be increased. Although one can almost double
the power dissipation with this method, one will be giving up
area on the printed circuit board which can defeat the purpose
of using surface mount technology. A graph of R
θ
JA versus
drain pad area is shown in Figure 17.
0.8 Watts
1.25 Watts*
1.5 Watts
R
θ
J
t
°
A, Area (square inches)
0.0
0.2
0.4
0.6
0.8
1.0
160
140
120
100
80
Figure 17. Thermal Resistance versus Drain Pad
Area for the SOT–223 Package (Typical)
Board Material = 0.0625
″
G–10/FR–4, 2 oz Copper
TA = 25
°
C
*Mounted on the DPAK footprint
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
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相關代理商/技術參數 |
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| MMFT2N02ELT1 | 功能描述:MOSFET N-CH 20V 1.6A SOT223 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| MMFT2N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 250 VOLTS |
| MMFT2N25ET3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
| MMFT3055E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS |
| MMFT3055EL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS |
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