- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98025 > MMFT3055VT3 (ON SEMICONDUCTOR) 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA PDF資料下載
參數(shù)資料
| 型號： | MMFT3055VT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 1/17頁 |
| 文件大小： | 193K |
| 代理商： | MMFT3055VT3 |
Publication Order Number:
MMFT3055V/D
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
628
MMFT3055V
Power MOSFET
1 Amp, 60 Volts
N–Channel SOT–223
These Power MOSFETs are designed for low voltage, high speed
switching applications in power supplies, converters and power motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 25
Vdc
Vpk
Drain Current – Continuous
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
1.7
1.4
6.0
Adc
Apk
Total PD @ TA = 25°C mounted on 1″ sq.
Drain pad on FR–4 bd material
Total PD @ TA = 25°C mounted on
0.70
″ sq. Drain pad on FR–4 bd material
Total PD @ TA = 25°C mounted on min.
Drain pad on FR–4 bd material
Derate above 25
°C
PD
2.1
1.7
0.94
6.3
Watts
mW/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 3.4 Apk, L = 10 mH, RG = 25 )
EAS
58
mJ
Thermal Resistance
– Junction to Ambient on 1
″ sq. Drain
pad on FR–4 bd material
– Junction to Ambient on 0.70
″ sq. Drain
pad on FR–4 bd material
– Junction to Ambient on min. Drain pad
on FR–4 bd material
R
θJA
R
θJA
R
θJA
70
88
159
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
1 AMPERE
60 VOLTS
RDS(on) = 130 mW
D
G
S
1
2
3
4
N–Channel
Device
Package
Shipping
ORDERING INFORMATION
MMFT3055VT1
SOT–223
1000 Tape & Reel
TO–261AA
CASE 318E
STYLE 3
http://onsemi.com
LWW
MARKING
DIAGRAM
TBD
L
= Location Code
WW
= Work Week
PIN ASSIGNMENT
3
2
1
4
Gate
Drain Source
Drain
MMFT3055VT3
SOT–223
4000 Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMFT6661T1 | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT6661T3 | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT960T3 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMPQ2222R1 | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ2222R2 | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMFT5P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| MMFT5P03HDT1 | 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
| MMFT6N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
| MMFT960T1 | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。