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參數資料
| 型號： | MMFT960T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數： | 1/34頁 |
| 文件大小： | 325K |
| 代理商： | MMFT960T3 |
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4–79
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Medium Power Field Effect
Transistor
N–Channel Enhancement–Mode
Silicon Gate TMOS
SOT–223 for Surface Mount
This TMOS medium power field effect transistor is designed for
high speed, low loss power switching applications such as
switching regulators, dc–dc converters, solenoid and relay drivers.
The device is housed in the SOT–223 package which is designed
for medium power surface mount applications.
Silicon Gate for Fast Switching Speeds
RDS(on) = 1.7 Ohm Max
Low Drive Requirement
The SOT–223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
Available in 12 mm Tape and Reel
Use MMFT960T1 to order the 7 inch/1000 unit reel
Use MMFT960T3 to order the 13 inch/4000 unit reel
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDS
60
Volts
Gate–to–Source Voltage — Non–Repetitive
VGS
±30
Volts
Drain Current
ID
300
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
0.8
6.4
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 65 to 150
°C
DEVICE MARKING
FT960
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient
R
θJA
156
°C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
TL
260
10
°C
Sec
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMFT960T1
Motorola Preferred Device
MEDIUM POWER
TMOS FET
300 mA
60 VOLTS
RDS(on) = 1.7 OHM MAX
CASE 318E–04, STYLE 3
TO–261AA
1
2
3
4
2,4 DRAIN
1
GATE
3 SOURCE
REV 3
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