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參數資料
| 型號： | MMSF10N02Z |
| 廠商： | Motorola, Inc. |
| 英文描述： | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1213; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
| 中文描述： | 功率MOSFET單TMOS是20伏10安培 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 184K |
| 代理商： | MMSF10N02Z |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
!
EZFETs
are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process and contain
monolithic back–to–back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature low RDS(on) and true
logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important.
Zener Protected Gates Provide Electrostatic Discharge Protection
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
R
θ
JA
TL
Value
20
20
±
12
10
7.0
80
2.5
– 55 to 150
50
260
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient
Maximum Temperature for Soldering
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ 10 Seconds)
Apk
Watts
°
C
°
C/W
°
C
DEVICE MARKING
ORDERING INFORMATION
10N02Z
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMSF10N02ZR2
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
Designer’s, HDTMOS and EZFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trade-
mark of the Bergquist Company.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMSF10N02Z/D
SINGLE TMOS
POWER MOSFET
10 AMPERES
20 VOLTS
RDS(on) = 0.015 OHM
CASE 751–05, Style 12
SO–8
Motorola Preferred Device
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
D
S
G
REV 2
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMSF10N02ZR2 | 制造商:Motorola Inc 功能描述: 制造商:MOTOROLA 功能描述: |
| MMSF10N03Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS |
| MMSF10N03ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMSF1310R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMSF2P02E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS |
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