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Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
!
EZFETs
are an advanced series of power MOSFETs which utilize
Motorola’s High Cell Density TMOS process and contain monolithic
back–to–back zener diodes. These zener diodes provide protection
against ESD and unexpected transients. These miniature surface mount
MOSFETs feature ultra low RDS(on) and true logic level performance. They
are capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse recovery
time. EZFET devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls in
mass storage products such as disk drives and tape drives.
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 200 V Machine Model and 2000 V Human Body Model
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Parameter
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Max
30
30
±
20
10
7.7
50
2.5
20
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C (1)
Drain Current
— Continuous @ TA = 70
°
C (1)
Drain Current
— Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25
°
C (1)
Linear Derating Factor @ TA = 25
°
C (1)
Total Power Dissipation @ TA = 25
°
C (2)
Linear Derating Factor @ TA = 25
°
C (2)
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 10 Vdc, IL = 10 Apk, L = 20 mH, RG = 25 )
THERMAL RESISTANCE
Watts
mW/
°
C
Watts
mW/
°
C
°
C
mJ
PD
1.6
12
TJ, Tstg
EAS
– 55 to 150
1000
Parameter
Symbol
RJA
Typ
—
—
Max
50
80
Unit
°
C/W
Junction–to–Ambient (1)
Junction–to–Ambient (2)
(1) When mounted on 1” square FR4 or G–10 board (VGS = 10 V, @ 10 seconds).
(2) When mounted on minimum recommended FR4 or G–10 board (VGS = 10 V, @ Steady State).
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
S10N3Z
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMSF10N03ZR2
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMSF10N03Z/D
SEMICONDUCTOR TECHNICAL DATA
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
D
S
G
CASE 751–05, Style 12
SO–8
SINGLE TMOS
POWER MOSFET
10 AMPERES
30 VOLTS
RDS(on) = 13 m
Motorola Preferred Device