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參數資料
| 型號： | MMSF4N01HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | TMOS MOSFET 5.8 AMPERES 20 VOLTS |
| 中文描述： | 5800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 285K |
| 代理商： | MMSF4N01HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
MiniMOS
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process.
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in
portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for
low voltage motor controls in mass storage products such as disk
drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Ideal for Synchronous Rectification
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
R
θ
JA
TL
Value
20
Unit
Vdc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
Thermal Resistance — Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
20
±
8.0
5.8
4.5
50
Vdc
Vdc
Adc
Apk
2.5
Watts
°
C
°
C/W
°
C
– 55 to 150
50
260
DEVICE MARKING
S4N01
(1) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.
ORDERING INFORMATION
Device
Reel Size
MMSF4N01HDR2
13
″
12 mm embossed tape
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Tape Width
Quantity
2500 units
Order this document
by MMSF4N01HD/D
SEMICONDUCTOR TECHNICAL DATA
REV 2
CASE 751–05, Style 13
SO–8
N–C
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
TMOS MOSFET
5.8 AMPERES
20 VOLTS
RDS(on) = 0.045 OHM
Motorola Preferred Device
D
S
G
Preferred
devices are Motorola recommended choices for future use and best overall value.
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| MMT10V275 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes |
相關代理商/技術參數 |
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| MMSF4N01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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