- 您現在的位置：買賣IC網 > PDF目錄371126 > MMSF4N01HD (MOTOROLA INC) TMOS MOSFET 5.8 AMPERES 20 VOLTS PDF資料下載
參數資料
| 型號： | MMSF4N01HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | TMOS MOSFET 5.8 AMPERES 20 VOLTS |
| 中文描述： | 5800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數： | 2/10頁 |
| 文件大小： | 285K |
| 代理商： | MMSF4N01HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
—
2.0
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 12 Vdc, VGS = 0 Vdc)
(VDS = 12 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
8.0 Vdc, VDS = 0)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
VGS(th)
0.6
—
0.8
2.8
1.1
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance
(VGS = 4.5 Vdc, ID = 4.0 Adc)
(VGS = 2.7 Vdc, ID = 2.0 Adc)
RDS(on)
—
—
0.035
0.043
0.045
0.055
Ohm
Forward Transconductance (VDS = 2.5 Vdc, ID = 2.0 Adc)
gFS
3.0
6.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
425
595
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
—
270
378
Transfer Capacitance
—
115
230
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 2.3
)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
13
26
ns
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 2.7 Vdc,
—
60
120
Turn–Off Delay Time
—
20
40
Fall Time
—
29
58
Turn–On Delay Time
RG = 2.3
)
—
10
20
Rise Time
(VDD = 6.0 Vdc, ID = 4.0 Adc,
VGS = 4.5 Vdc,
—
42
84
Turn–Off Delay Time
—
24
48
Fall Time
—
28
56
Gate Charge
See Figure 8
VGS = 4.5 Vdc)
—
9.2
13
nC
(VDS = 10 Vdc, ID = 4.0 Adc,
—
1.3
—
—
3.5
—
—
3.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 4.0 Adc, VGS = 0 Vdc)
(IS = 4.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.95
0.78
1.1
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
38
—
ns
(IS = 4.0 Adc, VGS = 0 Vdc,
—
17
—
—
22
—
Reverse Recovery Stored Charge
QRR
—
0.028
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相關PDF資料 |
PDF描述 |
|---|---|
| MMSF5N02HD | SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| MMSF5N03HD | SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS |
| MMSF7P03HDR2 | TMOS SINGLE P-CHANNEL FIELD EFFECT TRANSISTORS |
| MMSF7PO3HD | TMOS SINGLE P-CHANNEL FIELD EFFECT TRANSISTORS |
| MMT10V275 | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:19 x 36; Jacket Color:Black; Approval Bodies:UL; Approval Categories:UL AWM Style 1180; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/5 Type EE RoHS Compliant: Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MMSF4N01HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMSF4P01HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 4.0 AMPERES 12 VOLTS |
| MMSF5N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| MMSF5N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS |
| MMSF5N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R |
發布緊急采購，3分鐘左右您將得到回復。