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參數(shù)資料
| 型號： | MMSF1310R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 243K |
| 代理商： | MMSF1310R2 |
Publication Order Number:
MMSF1310/D
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
MMSF1310
Preferred Device
Power MOSFET
10 Amps, 30 Volts
NChannel SO8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding high
energy in the avalanche and commutation modes and the draintosource
diode has a very low reverse recovery time. MiniMOS
t devices are
designed for use in low voltage, high speed switching applications where
power efficiency is important. Typical applications are dcdc converters,
and power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Low R
DS(on) Provides Higher Efficiency and Extends Battery Life
High Speed Switching Provides High Efficiency for DC/DC
Converter
Miniature SO8 Surface Mount Package Saves Board Space
Diode Exhibits High Speed, With Soft Recovery
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Max
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
GatetoSource Voltage Continuous
VGS
± 20
Vdc
Continuous Drain Current @ TA = 25°C
(Note 1.)
Pulsed Drain Current (Note 2.)
ID
IDM
10
50
Adc
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
2.5
W
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
THERMAL RESISTANCE
JunctiontoAmbient (Note 1.)
RθJA
50
°C/W
1. When mounted on 1
″ square FR4 or G10 board
(VGS = 10 V, @ 10 Seconds)
2. Repetitive rating; pulse width limited by maximum junction temperature.
Source
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
1
8
10 AMPERES
30 VOLTS
RDS(on) = 15 mW
Device
Package
Shipping
ORDERING INFORMATION
MMSF1310R2
SO8
2500 Tape & Reel
SO8
CASE 751
STYLE 12
http://onsemi.com
NChannel
LYWW
MARKING
DIAGRAM
D
S
G
S1310
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
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