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參數(shù)資料
| 型號： | MMSF3300R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 6.7 A, 30 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 142K |
| 代理商： | MMSF3300R2 |
Publication Order Number:
MMSF3300/D
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 5
1
MMSF3300
Advance Information
Power MOSFET
11.5 Amps, 30 Volts
N–Channel SO–8
These Power MOSFETs are capable of withstanding high energy in the
avalanche and commutation modes and the drain–to–source diode has a
very low reverse recovery time. WaveFET
t devices are designed for use
in low voltage, high speed switching applications where power efficiency
is important. Typical applications are dc–dc converters, and power
management in portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for low
voltage motor controls in mass storage products such as disk drives and
tape drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional safety
margin against unexpected voltage transients.
Characterized Over a Wide Range of Power Ratings
Ultralow RDS(on) Provides Higher Efficiency and Extends Battery
Life in Portable Applications
Logic Level Gate Drive – Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Miniature SO–8 Surface Mount Package – Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage
VDGR
30
Vdc
Gate–to–Source Voltage
VGS
±20
Vdc
Gate–to–Source Operating Voltage
VGS
±16
Vdc
Operating and Storage Temperature Range
TJ, Tstg
–55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
L = 18.8 mH, IL(pk) = 7.3 A, VDS = 30 Vdc)
EAS
500
mJ
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Source
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
1
8
11.5 AMPERES
30 VOLTS
RDS(on) = 12.5 mW
Device
Package
Shipping
ORDERING INFORMATION
MMSF3300R2
SO–8
2500 Tape & Reel
SO–8
CASE 751
STYLE 12
http://onsemi.com
N–Channel
LYWW
MARKING
DIAGRAM
D
S
G
S3300
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
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