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參數資料
| 型號： | MMSF4205R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 8.8 A, 20 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-06, SO-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 256K |
| 代理商： | MMSF4205R2 |
http://onsemi.com
1
Medium Power Surface Mount Products
TMOS Single PChannel
Field Effect Transistors
MiniMOS
devices are an advanced series of power MOSFETs which
utilize Motorola’s High Cell Density HDTMOS process. These miniature
surface mount MOSFETs feature ultra low RDS(on) and true logic level
performance. They are capable of withstanding high energy in the avalanche
and commutation modes and the draintosource diode has a very low
reverse recovery time. MiniMOS devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dcdc converters, and power
management in portable and battery powered products such as computers,
printers, cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape drives.
The avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS Specified at Elevated Temperature
Mounting Information for SO8 Package Provided
Avalanche Energy Specified
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for PChannel devices omitted for clarity
Rating
Symbol
Max
Unit
DraintoSource Voltage
VDSS
20
V
DraintoGate Voltage (RGS = 1.0 M)
VDGR
20
V
GatetoSource Voltage — Continuous
VGS
± 12
V
1 inch SQ.
FR4 or G10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
50
2.5
20
10
8.0
50
°C/W
Watts
mW/
°C
A
Minimum
FR4 or G10 PCB
10 seconds
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
IDM
80
1.6
12.5
8.8
6.4
44
°C/W
Watts
mW/
°C
A
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 5.0 Apk, L = 40 mH, RG = 25 W)
EAS
500
mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
S4205
Device
Reel Size
Tape Width
Quantity
S4205
MMSF4205R2
13
″
12 mm embossed tape
2500 units
HDTMOS and MiniMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MMSF4205/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
CASE 75106, Style 12
SO8
MMSF4205
SINGLE TMOS
POWER MOSFET
10 AMPERES
20 VOLTS
RDS(on) = 14 mW
Motorola Preferred Device
SOURCE
1
2
3
4
8
7
6
5
TOP VIEW
SOURCE
GATE
DRAIN
D
S
G
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