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參數資料
| 型號： | MMSF3P03HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 268K |
| 代理商： | MMSF3P03HDR2 |
Publication Order Number:
MMSF3P03HD/D
Semiconductor Components Industries, LLC, 2000
September, 2004 Rev. XXX
1
MMSF3P03HD
Preferred Device
Power MOSFET
3 Amps, 30 Volts
PChannel SO8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a very low reverse recovery time.
MiniMOS
t devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dcdc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives. The
avalanche energy is specified to eliminate the guesswork in designs
where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Ultra Low R
DS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
GatetoSource Voltage Continuous
VGS
± 20
Vdc
Drain Current Continuous @ TA = 25°C
Drain Current Continuous @ TA = 100°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
4.6
3.0
50
Adc
Apk
Total Power Dissipation @ TA = 25°C
(Note 2.)
PD
2.5
Watts
Operating and Storage Temperature Range
55 to 150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 5.0 Vdc,
IL = 9.0 Apk, L = 14 mH, RG = 25 )
EAS
567
mJ
Thermal Resistance Junction to Ambient
(Note 2.)
RθJA
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. Negative sign for PChannel device omitted for clarity.
2. Mounted on 2
″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),
10 sec. max.
NC
1
2
3
4
8
7
6
5
Top View
Source
Gate
Drain
D
S
G
1
8
3 AMPERES
30 VOLTS
RDS(on) = 100 mW
Device
Package
Shipping
ORDERING INFORMATION
MMSF3P03HDR2
SO8
2500 Tape & Reel
SO8
CASE 751
STYLE 13
http://onsemi.com
PChannel
LYWW
MARKING
DIAGRAM
S3P03
L
= Location Code
Y
= Year
WW
= Work Week
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
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