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參數資料
| 型號： | MMSF2P02E |
| 廠商： | Motorola, Inc. |
| 英文描述： | SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS |
| 中文描述： | 功率MOSFET單任務操作系統2.5安培20伏特 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 266K |
| 代理商： | MMSF2P02E |
5
Motorola TMOS Power MOSFET Transistor Device Data
Figure 11. Reverse Recovery Time (trr)
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
A
0
25
50
75
100
125
150
ID = 6 A
200
150
250
100
50
I
t, TIME
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
di/dt = 300 A/
μ
s
Standard Cell Density
trr
High Cell Density
trr
tb
ta
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
10
0.1
dc
10 ms
1
100
100
Mounted on 2” sq. FR4 board (1” sq. 2 oz. Cu 0.06”
thick single sided), 10s max.
1 ms
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy
rating must be derated for temperature as shown in the ac-
companying graph (Figure 13). Maximum energy at currents
below rated continuous ID can safely be assumed to equal
the values indicated.
Figure 14. Thermal Response
t, TIME (s)
R
T
1
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
10
0.0022
0.0210
0.2587
0.7023
0.6863
108.44 F
3.1413 F
0.3517 F
0.0207 F
0.0020 F
Chip
Ambient
Normalized to
θ
ja at 10s.
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相關代理商/技術參數 |
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|---|---|
| MMSF2P02ER2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MMSF3305 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS |
| MMSF3350R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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