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參數資料
| 型號： | MMSF3300 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 30 VOLTS |
| 中文描述： | 6700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 2/12頁 |
| 文件大小： | 229K |
| 代理商： | MMSF3300 |
2
Motorola TMOS Power MOSFET Transistor Device Data
POWER RATINGS
(TJ = 25
°
C unless otherwise specified)
Parameter
Symbol
ID
ID
IDM
PD
Value
11.5
8.2
50
2.5
20
50
3.0
Unit
Adc
Adc
Adc
Watts
mW/
°
C
°
C/W
Adc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
≤
10 s)
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Thermal Resistance — Junction–to–Ambient
Continuous Source Current (Diode Conduction)
Mounted on 1 inch square
FR–4 or G10 board
VGS = 10 Vdc
t
≤
10 seconds
R
θ
JA
IS
Parameter
Symbol
ID
ID
IDM
PD
Value
9.1
6.5
50
1.6
12.5
80
2.0
Unit
Adc
Adc
Adc
Watts
mW/
°
C
°
C/W
Adc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
≤
10 s)
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Thermal Resistance — Junction–to–Ambient
Continuous Source Current (Diode Conduction)
Mounted on 1 inch square
FR–4 or G10 board
VGS = 10 Vdc
Steady State
R
θ
JA
IS
Parameter
Symbol
ID
ID
IDM
PD
Value
9.1
6.5
50
1.6
12.5
80
2.0
Unit
Adc
Adc
Adc
Watts
mW/
°
C
°
C/W
Adc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
≤
10 s)
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Thermal Resistance — Junction–to–Ambient
Continuous Source Current (Diode Conduction)
Mounted on minimum recommended
FR–4 or G10 board
VGS = 10 Vdc
t
≤
10 seconds
R
θ
JA
IS
Parameter
Symbol
ID
ID
IDM
PD
Value
6.7
4.7
50
0.8
6.7
150
1.0
Unit
Adc
Adc
Adc
Watts
mW/
°
C
°
C/W
Adc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 100
°
C
Drain Current
— Single Pulse (tp
≤
10 s)
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Thermal Resistance — Junction–to–Ambient
Continuous Source Current (Diode Conduction)
Mounted on minimum recommended
FR–4 or G10 board
VGS = 10 Vdc
Steady State
R
θ
JA
IS
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| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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