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參數(shù)資料
| 型號(hào)： | MMSF3300 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 30 VOLTS |
| 中文描述： | 6700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 229K |
| 代理商： | MMSF3300 |
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
0
4
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2.0
2.5
4.0
0
4
8
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
3
4
10
0
0.20
0.30
0
2
4
6
8
16
0.016
0.018
0.020
0.008
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1.5
2.0
5
10
15
30
1
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VDS
≥
10 V
TJ = 125
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
ID = 5.0 A
TJ = 25
°
C
VGS = 4.5 V
VGS = 10 V
ID = 10 A
3.0
3.5
5
6
7
8
9
10
10 V
–50
–25
0
25
50
75
100
125
150
TJ = 125
°
C
1.0
10
20
25
100
°
C
R
0
0.25
0.50
1.25
0.75
1.00
1.50
1.75
2.00
2
TJ = 25
°
C
1
6
2
6
10
0.10
0.002
0.004
0.006
0
0.5
0
0.1
3
7
5
9
3
7
1
5
9
0.15
0.25
0.05
0.014
0.010
0.012
12
6.0 V
4.5 V
4.1 V
3.7 V
3.3 V
3.1 V
2.9 V
25
°
C
VGS = 2.7 V
10 V
3.5 V
14
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| MMSF3P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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