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參數資料
| 型號： | MPSA55RL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-226AA, 3 PIN |
| 文件頁數： | 1/36頁 |
| 文件大小： | 385K |
| 代理商： | MPSA55RL |
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2–619
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
MAXIMUM RATINGS
Rating
Symbol
MPSA05
MPSA55
MPSA06
MPSA56
Unit
Collector – Emitter Voltage
VCEO
60
80
Vdc
Collector – Base Voltage
VCBO
60
80
Vdc
Emitter – Base Voltage
VEBO
4.0
Vdc
Collector Current – Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA(1)
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
MPSA05, MPSA55
MPSA06, MPSA56
V(BR)CEO
60
80
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 100 Adc, IC = 0)
V(BR)EBO
4.0
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
ICES
—
0.1
Adc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
MPSA05, MPSA55
(VCB = 80 Vdc, IE = 0)
MPSA06, MPSA56
ICBO
—
0.1
Adc
1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN
MPSA05
MPSA06
PNP
MPSA55
MPSA56
*Motorola Preferred Device
*
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MPSA55RLRA | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA55RLRAG | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA55T3 | 制造商:National Semiconductor Corporation 功能描述:TRANSISTOR, BJT, PNP, 60V V(BR) CEO, 500MA I(C), TO-92, FORMED LEADS |
| MPSA55-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN MPSA05 PNP MPSA55 |
| MPSA55-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN MPSA05 PNP MPSA55 |
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