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參數資料
| 型號： | MRF10005 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Microwave Power Transistor, NPN Silicon(微波NPN硅射頻功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CASE 336E-02, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 100K |
| 代理商： | MRF10005 |
1
MRF10005
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for CW and long pulsed common base amplifier applications,
such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high
overall duty cycles.
Guaranteed Performance @ 1.215 GHz, 28 Vdc
Output Power = 5.0 Watts CW
Minimum Gain = 8.5 dB, 10.3 dB (Typ)
RF Performance Curves given for 28 Vdc and 36 Vdc Operation
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Industry Standard Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCBO
VEBO
IC
PD
55
Vdc
Collector–Base Voltage
55
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector Current — Continuous (1)
1.25
mAdc
Total Device Dissipation @ TA = 25
°
C (1)
Derate above 25
°
C
25
143
Watt
mW/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +200
°
C
Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
7.0
°
C/W
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF10005/D
SEMICONDUCTOR TECHNICAL DATA
5.0 W, 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 336E–02, STYLE 1
REV 6
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| MRF1000MB | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發射極最大電壓 VCEO:25 V 發射極 - 基極電壓 VEBO:4 V 集電極連續電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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